Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

被引：1740

作者：

Zeng, Zhiyuan ^{[1
]}

Yin, Zongyou ^{[1
]}

Huang, Xiao ^{[1
]}

Li, Hai ^{[1
]}

He, Qiyuan ^{[1
]}

Lu, Gang ^{[1
]}

Boey, Freddy ^{[1
]}

Zhang, Hua ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2011年 / 50卷 / 47期

关键词：

electrochemistry; nanomaterials; nanosheets; semiconductors; sensors; MOS2; GRAPHENE; INTERCALATION; EXFOLIATION; NANORIBBONS; WS2;

D O I：

10.1002/anie.201106004

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS 2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process (see picture). The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：11093 / 11097

页数：5

共 46 条

[21] Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].

Mak, Kin Fai ;

Lee, Changgu ;

Hone, James ;

Shan, Jie ;

Heinz, Tony F. .

PHYSICAL REVIEW LETTERS, 2010, 105 (13)

[22]

Matte H. S. S. R., 2010, ANGEW CHEM, V122, P4153, DOI DOI 10.1002/ANGE.201000009

[23] MoS2 and WS2 Analogues of Graphene [J].

Matte, H. S. S. Ramakrishna ;

Gomathi, A. ;

Manna, Arun K. ;

Late, Dattatray J. ;

Datta, Ranjan ;

Pati, Swapan K. ;

Rao, C. N. R. .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2010, 49 (24) :4059-4062

[24] EXFOLIATED MOS2 FOR STABILIZATION AND ACTIVATION OF PT OXIDATION CATALYSTS [J].

MIREMADI, BK ;

MORRISON, SR .

JOURNAL OF CATALYSIS, 1991, 131 (01) :127-132

[25] THE INTERCALATION AND EXFOLIATION OF TUNGSTEN DISULFIDE [J].

MIREMADI, BK ;

MORRISON, SR .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :4970-4974

[26] Graphene Analogues of BN: Novel Synthesis and Properties [J].

Nag, Angshuman ;

Raidongia, Kalyan ;

Hembram, Kailash P. S. S. ;

Datta, Ranjan ;

Waghmare, Umesh V. ;

Rao, C. N. R. .

ACS NANO, 2010, 4 (03) :1539-1544

[27] Two-dimensional atomic crystals [J].

Novoselov, KS ;

Jiang, D ;

Schedin, F ;

Booth, TJ ;

Khotkevich, VV ;

Morozov, SV ;

Geim, AK .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (30) :10451-10453

[28] Exfoliated oxide nanosheets: new solution to nanoelectronics [J].

Osada, Minoru ;

Sasaki, Takayoshi .

JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (17) :2503-2511

[29] SCANNING TUNNELING MICROSCOPY OF SINGLE-LAYER MOS2 IN WATER AND BUTANOL [J].

QIN, XR ;

YANG, D ;

FRINDT, RF ;

IRWIN, JC .

ULTRAMICROSCOPY, 1992, 42 :630-636

[30] Single-layer MoS2 transistors [J].

Radisavljevic, B. ;

Radenovic, A. ;

Brivio, J. ;

Giacometti, V. ;

Kis, A. .

NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150

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