Annealing kinetics and reversibility of stress-induced leakage current in thin oxides

被引：17

作者：

Riess, P ^{[1
]}

Ghibaudo, G ^{[1
]}

Pananakakis, G ^{[1
]}

Brini, J ^{[1
]}

机构：

[1] ENSERG, UMR CNRS, Lab Phys Composants Semicond, F-38016 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 23期

关键词：

D O I：

10.1063/1.121534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The annealing kinetics of stress-induced leakage current in ultrathin SiO2 has been quantitatively investigated after high temperature bakes. We have found that the defects at the origin of the stress induced-leakage current can be fully annihilated and that it is possible to generate and anneal them several times without deterioration of the oxide quality. Moreover, the activation energy and diffusion coefficient deduced from the recovery time constant of the annealing kinetics are found nearly independent of the oxide thickness. (C) 1998 American Institute of Physics.

引用

页码：3041 / 3043

页数：3

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