STRESS-INDUCED OXIDE LEAKAGE

被引：124

作者：

ROFAN, R

HU, CM

机构：

[1] Electronics Research Laboratory, University of California, Berkeley

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Voltage-stress-induced leakage in 5-nm thermal oxides was studied. A correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests. The close correlation suggests that the leakage may be a result of the oxide-trap-assisted tunneling.

引用

页码：632 / 634

页数：3

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