OBSERVATION OF POSITIVELY CHARGED STATE GENERATION NEAR THE SI/SIO2 INTERFACE DURING FOWLER-NORDHEIM TUNNELING

被引：88

作者：

MASERJIAN, J

ZAMANI, N

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：743 / 746

页数：4

共 18 条

[1] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING
CHEUNG, NW
FELDMAN, LC
SILVERMAN, PJ
STENSGAARD, I
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (11) : 859 - 861
[2] EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE
GRUNTHANER, FJ
MASERJIAN, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2108 - 2112
[3] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
GRUNTHANER, FJ
GRUNTHANER, PJ
VASQUEZ, RP
LEWIS, BF
MASERJIAN, J
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453
[4] GRUNTHANER FJ, 1980, IEEE T NUCL SCI, V27, P164
[5] GRUNTHANER FJ, 1980, PHYSICS MOS INSULATO, P290
[6] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389
[7] GRUNTHANER FJ, 1979, PHYS REV LETT, V43, P1983
[8] LEWICKI G, 1975, J APPL PHYS, V7, P3032
[9] MADHUKAR A, COMMUNICATION
[10] TUNNELING IN THIN MOS STRUCTURES
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 996 - 1003