BEHAVIOR OF THE SI/SIO2 INTERFACE OBSERVED BY FOWLER-NORDHEIM TUNNELING

被引：270

作者：

MASERJIAN, J

ZAMANI, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：559 / 567

页数：9

共 36 条

[1] FIELD IONIZATION NEAR NONUNIFORM METAL SURFACES [J].

ALFERIEFF, ME ;

DUKE, CB .

JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (03) :938-+

[2] TRAPPING EFFECTS IN IRRADIATED AND AVALANCHE-INJECTED MOS CAPACITORS [J].

BAKOWSKI, M ;

COCKRUM, RH ;

ZAMANI, N ;

MASERJIAN, J ;

VISWANATHAN, CR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1233-1238

[3]

CAPLAN PJ, 1980, PHYSICS MOS INSULATO, P306

[4] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING [J].

CHEUNG, NW ;

FELDMAN, LC ;

SILVERMAN, PJ ;

STENSGAARD, I .

APPLIED PHYSICS LETTERS, 1979, 35 (11) :859-861

[5] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[6] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

PHYSICAL REVIEW LETTERS, 1979, 43 (22) :1683-1686

[7] EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE [J].

GRUNTHANER, FJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2108-2112

[8]

GRUNTHANER FJ, 1980, PHYSICS MOS INSULATO, P290

[9]

GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389

[10]

GRUTHANER FJ, 1979, J VAC SCI TECHNOL, V16, P1443

← 1 2 3 4 →