HIGH-FIELD-INDUCED VOLTAGE-DEPENDENT OXIDE CHARGE

被引：35

作者：

OLIVO, P

RICCO, B

SANGIORGI, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 17期

关键词：

D O I：

10.1063/1.96448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1135 / 1137

页数：3

共 10 条

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[8] BREAKDOWN IN SILICON-OXIDE [J].

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[9] CURRENT AND C-V INSTABILITIES IN SIO2 AT HIGH FIELDS [J].

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[10]

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