Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

被引：18

作者：

Moser, NA ^{[1
]}

Gillespie, JK

Via, GD

Crespo, A

Yannuzzi, MJ

Jessen, GH

Fitch, RC

Luo, B

Ren, F

Gila, BP

Onstine, AH

Abernathy, CR

Pearton, SJ

机构：

[1] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 20期

关键词：

D O I：

10.1063/1.1628394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interdevice isolation currents in mesa-isolated AlGaN/GaN high-electron-mobility transistors are found to exhibit thermally activated behavior, with an activation energy of similar to1.5 eV. This value is largely independent of surface cleaning processes or the type of passivation film (SiNX, Sc2O3, MgO) used to reduce the current collapse phenomena in the devices. However, the magnitude of the isolation current is a strong function of the surface treatment employed. The lowest isolation currents for conditions under which current collapse is mitigated are obtained using Sc2O3 passivation layers. (C) 2003 American Institute of Physics.

引用

页码：4178 / 4180

页数：3

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