Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

被引：43

作者：

Gillespie, JK ^{[1
]}

Fitch, RC

Sewell, J

Dettmer, R

Via, GD

Crespo, A

Jenkins, TJ

Luo, B

Mehandru, R

Kim, J

Ren, F

Gila, BP

Onstine, AH

Abernathy, CR

Pearton, SJ

机构：

[1] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 09期

基金：

美国国家科学基金会;

关键词：

GaN; MODFETs; passivation; surface states;

D O I：

10.1109/LED.2002.802592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low temperature (100 degreesC) deposition of Sc2O3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5 x 100 mum(2) HEMTs for both types of oxide passivation layers. Both Sc2O3 and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN. passivation which typically showed <2 dB increase on the same types of devices. The, HEMT gain also in general remained linear over a wider input power range with the Sc2O3 or MgO passivation. These films appear promising for reducing the effects of surface states on the do and if performance of AlGaN/GaN HEMTs.

引用

页码：505 / 507

页数：3

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