Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

被引：53

作者：

Asadi, Kamal ^{[1
]}

Li, Mengyuan ^{[1
]}

Stingelin, Natalie ^{[2
]}

Blom, Paul W. M. ^{[1
,3
]}

de Leeuw, Dago M. ^{[1
,4
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] Holst Ctr, NL-5605 KN Eindhoven, Netherlands

[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期

关键词：

BLENDS; DEVICES;

D O I：

10.1063/1.3508948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3 x 3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified. (C) 2010 American Institute of Physics. [doi:10.1063/1.3508948]

引用

页数：3

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