Organic Nonvolatile Memory Devices Based on Ferroelectricity

被引:529
作者
Naber, Ronald C. G. [1 ]
Asadi, Kamal [2 ]
Blom, Paul W. M. [2 ,3 ]
de Leeuw, Dago M. [2 ,4 ]
de Boer, Bert [2 ]
机构
[1] ECN Solar Energy, NL-1755 ZG Petten, Netherlands
[2] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[3] Holst Ctr, NL-5605 KN Eindhoven, Netherlands
[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
关键词
FIELD-EFFECT TRANSISTOR; VINYLIDENE FLUORIDE; SWITCHING CHARACTERISTICS; ELECTRICAL-PROPERTIES; FILMS; PERFORMANCE; THICKNESS; CRYSTALLIZATION; POLARIZATION; DEPENDENCE;
D O I
10.1002/adma.200900759
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
引用
收藏
页码:933 / 945
页数:13
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