Organic Nonvolatile Memory Devices Based on Ferroelectricity

被引：529

作者：

Naber, Ronald C. G. ^{[1
]}

Asadi, Kamal ^{[2
]}

Blom, Paul W. M. ^{[2
,3
]}

de Leeuw, Dago M. ^{[2
,4
]}

de Boer, Bert ^{[2
]}

机构：

[1] ECN Solar Energy, NL-1755 ZG Petten, Netherlands

[2] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[3] Holst Ctr, NL-5605 KN Eindhoven, Netherlands

[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 09期

关键词：

FIELD-EFFECT TRANSISTOR; VINYLIDENE FLUORIDE; SWITCHING CHARACTERISTICS; ELECTRICAL-PROPERTIES; FILMS; PERFORMANCE; THICKNESS; CRYSTALLIZATION; POLARIZATION; DEPENDENCE;

D O I：

10.1002/adma.200900759

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

引用

页码：933 / 945

页数：13

共 90 条

[51] Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric [J].