Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN

被引：18

作者：

Baik, JM ^{[1
]}

Kim, HS ^{[1
]}

Park, CG ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1615676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructural evolution of Mn-implanted p-type GaN has been studied using cross-sectional transmission electron microscopy. As Mn3Ga nanoclusters (3-7 nm) with a hexagonal structure were produced by annealing (less than or equal to800 degreesC), the weak ferromagnetic property emerged. Higher-temperature annealing (greater than or equal to900 degreesC) reduced the ferromagnetic signal and produced antiferromagnetic Mn-nitride nanoclusters, such as Mn6N2.58 and Mn3N2. This provides evidence that the ferromagnetic property was deeply related to microstructural changes of nanoclusters. (C) 2003 American Institute of Physics.

引用

页码：2632 / 2634

页数：3

共 14 条

[1]

Dielt T., 2000, SCIENCE, V287, P1019

[2] Magnetotransport of p-type GaMnN assisted by highly conductive precipitates [J].

Kim, KH ;

Lee, KJ ;

Kim, DJ ;

Kim, HJ ;

Ihm, YE ;

Djayaprawira, D ;

Takahashi, M ;

Kim, CS ;

Kim, CG ;

Yoo, SH .

APPLIED PHYSICS LETTERS, 2003, 82 (11) :1775-1777

[3]

NASREDDINE EF, 1977, SOLID STATE COMMUN, V23, P147, DOI 10.1016/0038-1098(77)90097-7

[4] MAGNETIC-PROPERTIES AND CRYSTAL DISTORTION OF HEXAGONAL MN3GA [J].

NIIDA, H ;

HORI, T ;

NAKAGAWA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1983, 52 (05) :1512-1514

[5] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[6] Making nonmagnetic semiconductors ferromagnetic [J].

Ohno, H .

SCIENCE, 1998, 281 (5379) :951-956

[7] Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb [J].

Oiwa, A ;

Slupinski, T ;

Munekata, H .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :518-520

[8] Structural defects and microstrain in GaN induced by Mg ion implantation [J].

Pong, BJ ;

Pan, CJ ;

Teng, YC ;

Chi, GC ;

Li, WH ;

Lee, KC ;

Lee, CH .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :5992-5996

[9] Room temperature ferromagnetic properties of (Ga, Mn)N [J].

Reed, ML ;

El-Masry, NA ;

Stadelmaier, HH ;

Ritums, MK ;

Reed, MJ ;

Parker, CA ;

Roberts, JC ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3473-3475

[10] Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature [J].

Sonoda, S ;

Shimizu, S ;

Sasaki, T ;

Yamamoto, Y ;

Hori, H .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :1358-1362

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