Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb

被引：88

作者：

Oiwa, A

Slupinski, T

Munekata, H

机构：

[1] KAST, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1343497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reduction in coercive force by light illumination has been found in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by molecular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arising from excess photogenerated holes, reduces the domain wall energy and changes the magnetization hysteresis characteristics. The value of coercive force returns to the original value when excess holes recombine with trapped electrons. (C) 2001 American Institute of Physics.

引用

页码：518 / 520

页数：3

共 15 条

[1] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As
Akai, H
[J]. PHYSICAL REVIEW LETTERS, 1998, 81 (14) : 3002 - 3005
[2] ANZINA LV, 1976, JETP LETT+, V23, P474
[3] 2 NEW MANIFESTATIONS OF PHOTOMAGNETIC EFFECT
ENZ, U
VANDERHE.H
[J]. SOLID STATE COMMUNICATIONS, 1968, 6 (06) : 347 - &
[4] Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In,Mn)As/GaSb
Koshihara, S
Oiwa, A
Hirasawa, M
Katsumoto, S
Iye, Y
Urano, C
Takagi, H
Munekata, H
[J]. PHYSICAL REVIEW LETTERS, 1997, 78 (24) : 4617 - 4620
[5] Transport properties and origin of ferromagnetism in (Ga,Mn)As
Matsukura, F
Ohno, H
Shen, A
Sugawara, Y
[J]. PHYSICAL REVIEW B, 1998, 57 (04) : R2037 - R2040
[6] III-V BASED DILUTED MAGNETIC SEMICONDUCTORS - CARRIER-INDUCED MAGNETISM
MUNEKATA, H
[J]. ADVANCED MATERIALS, 1995, 7 (01) : 82 - 85
[7] Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures
Munekata, H
Abe, T
Koshihara, S
Oiwa, A
Hirasawa, M
Katsumoto, S
Iye, Y
Urano, C
Takagi, H
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 4862 - 4864
[8] PREPARATION OF (IN,MN)AS/(GA,AL)SB MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES AND THEIR FERROMAGNETIC CHARACTERISTICS
MUNEKATA, H
ZASLAVSKY, A
FUMAGALLI, P
GAMBINO, RJ
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (21) : 2929 - 2931
[9] Ultrafast all-optical spin polarization switch using quantum-well etalon
Nishikawa, Y
Tackeuchi, A
Yamaguchi, M
Muto, S
Wada, O
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) : 661 - 667
[10] Properties of ferromagnetic III-V semiconductors
Ohno, H
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) : 110 - 129

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