III-V BASED DILUTED MAGNETIC SEMICONDUCTORS - CARRIER-INDUCED MAGNETISM

被引：11

作者：

MUNEKATA, H

机构：

[1] Imaging Science and Engineering, Tokyo Institute of Technology, Midori-ku Yokohama 227

来源：

ADVANCED MATERIALS | 1995年 / 7卷 / 01期

关键词：

D O I：

10.1002/adma.19950070119

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Magnetism in III-V semiconductors is a comparatively new area of study: the first III-V based diluted magnetic semiconductors were produced in epitaxial films of (In,Mn)As grown on GaAs(100) substrates in 1989. An account is given of the magnetic behavior of these novel semi-magnetic alloys at various carrier concentrations. Finally, magneto-optical devices are presented in which the control of the carrier concentration by an electric field results in the manipulation of magnetic properties.

引用

页码：82 / 85

页数：4

共 24 条

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