Dielectric properties of TiO2-Nb2O crystallographic shear structures

被引:15
作者
Cava, RJ
Krajewski, JJ
Peck, WF
Roberts, GL
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1557/JMR.1996.0179
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dielectric constants (K) have been measured near ambient temperature for polycrystalline bulk ceramics of the crystallographic shear compounds TiNb24O62, Ti2Nb10O29, and TiNb2O7. These show enhanced K's over Nb2O5 and TiO2, with the 2:10:29 phase displaying an ambient temperature K of approximately 130. We also report the effects of partial substitution of Nb by Ta. In general, thr dielectric constants are enhanced for 5-10% Ta substitution with the detailed behavior differing for the three phases.
引用
收藏
页码:1428 / 1432
页数:5
相关论文
共 9 条
[1]   ENHANCEMENT OF THE DIELECTRIC-CONSTANT OF TA2O5 THROUGH SUBSTITUTION WITH TIO2 [J].
CAVA, RF ;
PECK, WF ;
KRAJEWSKI, JJ .
NATURE, 1995, 377 (6546) :215-217
[2]  
EIMORI T, 1993, IEDM, V93, P631
[3]   EFFECTS OF ADDITIVE ELEMENTS ON ELECTRICAL-PROPERTIES OF TANTALUM OXIDE-FILMS [J].
FUJIKAWA, H ;
TAGA, Y .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (05) :2538-2544
[4]  
JONGEJAN A, 1969, J LESS-COMMON MET, V19, P186
[5]  
Kwon K. W., 1994, IEDM, V94, P835
[6]  
NEGAS T, 1993, AM CERAM SOC BULL, V72, P80
[7]   THERMAL-STABILITY OF LONG-RANGE ORDER IN OXIDES [J].
ROTH, RS .
PROGRESS IN SOLID STATE CHEMISTRY, 1980, 13 (02) :159-192
[8]   UV-O3 AND DRY-O2 - 2-STEP ANNEALED CHEMICAL VAPOR-DEPOSITED TA2O5 FILMS FOR STORAGE DIELECTRICS OF 64-MB DRAMS [J].
SHINRIKI, H ;
NAKATA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :455-462
[9]  
Takaishi Y., 1994, IEDM, V94, P839