Microcrystalline silicon deposition: Process stability and process control

被引：28

作者：

van den Donker, M. N. ^{[1
]}

Kilper, T.

Grunsky, D.

Rech, B.

Houben, L.

Kessels, W. M. M.

de Sanden, M. C. M. van

机构：

[1] Forschungszentrum, Inst Photovolta, D-52425 Julich, Germany

[2] Forschungszentrum, Inst Festkorperforsch, D-52425 Julich, Germany

[3] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 19期

关键词：

depth profiling; plasma processing and deposition; microcrystalline silicon; solar cells;

D O I：

10.1016/j.tsf.2006.11.119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Applying in situ process diagnostics, we identified several process drifts occurring in the parallel plate plasma deposition of microcrystalline silicon (mu c-Si:H). These process drifts are powder formation (visible from diminishing dc-bias and changing spatial emission profile on a time scale of 10(0) s), transient SiH4 depletion (visible from a decreasing SiH emission intensity on a time scale of 10(2) s), plasma heating (visible from an increasing substrate temperature on a time scale of 10(3) s) and a still puzzling long-term drift (visible from a decreasing SiH emission intensity on a time scale of 10(4) s). The effect of these drifts on the crystalline volume fraction in the deposited films is investigated by selected area electron diffraction and depth-profiled Raman spectroscopy. An example shows how the transient depletion and long-term drift can be prevented by suitable process control. Solar cells deposited using this process control show enhanced performance. Options for process control of plasma heating and powder formation are discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：7455 / 7459

页数：5

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