Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application

The authors proposed a formation mechanism of Ge nanocrystals embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory application in this study. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high pressure H-2 treatment or steam process. In this research, the preannealing capping oxide step is a critical process for nonvolatile memory effect. Transmission electron microscope shows the shape and density of nanocrystals in the dielectric. Moreover, the memory structure with Ge nanocrystal embedded in SiNx has better charge storage ability and data retention than Ge nanocrystal embedded in SiOx. (C) 2007 American Institute of Physics.