Band lineup between silicon and transparent conducting oxides

被引：45

作者：

Hoeffling, B. ^{[1
]}

Schleife, A. ^{[1
]}

Fuchs, F. ^{[1
]}

Roedl, C. ^{[1
]}

Bechstedt, F. ^{[1
]}

机构：

[1] Univ Jena, ETSF, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 03期

关键词：

Anderson model; conduction bands; electron affinity; elemental semiconductors; indium compounds; interface states; quasiparticles; semiconductor heterojunctions; silicon; tin compounds; valence bands; zinc compounds; WORK FUNCTION; SEMICONDUCTORS; ALIGNMENT; SURFACE; IN2O3;

D O I：

10.1063/1.3464562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modern quasiparticle calculations based on hybrid functionals are used to predict natural band discontinuities between silicon and In2O3, ZnO, and SnO2 by two alignment methods, a modified Tersoff method for the branch-point energy and the Shockley-Anderson model via the electron affinity rule. The results of both methods are found to be in good agreement. A tendency for misaligned type-II heterostructures is predicted, indicating efficient electron-hole separation at the Si-oxide interfaces. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464562]

引用

页数：3

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