Photovoltaic effect of ZnO/Si heterostructure

被引：20

作者：

Fu, ZX ^{[1
]}

Lin, BX

Liao, GH

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 1999年 / 16卷 / 10期

关键词：

D O I：

10.1088/0256-307X/16/10/019

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A type of semiconductor heterostructure fabricated by zinc-oxide films deposited on silicon substrates is investigated. The current-voltage characteristics under dark or illumination were determined. It is indicated that the sample is likely a semiconductor junction, and this structure generates an obvious photovoltaic effect. Spectral responses of photovoltage, cathodotoluminescence and excitation spectra at room temperature were employed to study the structural properties and the mechanism generating photovoltaic effect of the samples. The energy level and the process of electron transition in the ZnO film have also been deduced.

引用

页码：753 / 755

页数：3

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