Optical spectroscopy of III-VI (magnetic) semiconductor quantum dots

被引:9
作者
Crowell, PA [1 ]
Nikitin, V
Gupta, JA
Awschalom, DD
Flack, F
Samarth, N
机构
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
来源
PHYSICA E | 1998年 / 2卷 / 1-4期
关键词
quantum dots; diluted magnetic semiconductors; II-VI materials;
D O I
10.1016/S1386-9477(98)00174-X
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have probed the magnetooptical properties of II-VI semiconductor quantum dots at low temperatures (T = 5 K) in magnetic fields up to 6 T. A layer of coherently strained CdSe dots of diameters 5-20 nm is introduced into heterostructures containing either a Zn0.8Cd0.2Se quantum well or a barrier layer of MnSe. In the quantum well structure, carriers are localized in strain fields due to the nearby quantum dot layer. The effective g-factors g* of excitons in the localized states are similar to-1.5. In contrast, g* similar to 6-7 for carriers localized in CdSe islands coupled to an adjacent MnSe barrier. The enhancement of the g-factor in this case is due to the overlap of the tails of the localized wave functions with Mn++ ions in the barrier. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:854 / 857
页数:4
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