Chemical control of the charge state of nitrogen-vacancy centers in diamond

被引：297

作者：

Hauf, M. V. ^{[1
]}

Grotz, B. ^{[2
,3
]}

Naydenov, B. ^{[2
,3
]}

Dankerl, M. ^{[1
]}

Pezzagna, S. ^{[4
]}

Meijer, J. ^{[4
]}

Jelezko, F. ^{[2
,3
]}

Wrachtrup, J. ^{[2
,3
]}

Stutzmann, M. ^{[1
]}

Reinhard, F. ^{[2
,3
]}

Garrido, J. A. ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Univ Stuttgart, Inst Phys 3, D-70550 Stuttgart, Germany

[3] Univ Stuttgart, Res Ctr SCoPE, D-70550 Stuttgart, Germany

[4] Ruhr Univ Bochum, RUBION, D-44780 Bochum, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 08期

关键词：

SURFACE; TRANSISTORS; NEXTNANO; SPIN;

D O I：

10.1103/PhysRevB.83.081304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the effect of surface termination on the charge state of nitrogen-vacancy (NV) centers, which have been ion-implanted a few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown nonfluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the disappearance of NV- in the vicinity of the hydrogen-terminated surface. The band bending, which induces a p-type surface conductive layer, leads to a depletion of electrons in the nitrogen-vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way to control the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to electrostatic control of the charge state with the use of an external gate electrode.

引用

页数：4

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