High-performance 5.2GHz LNA with on-chip inductor to provide ESD protection

被引：45

作者：

Leroux, P ^{[1
]}

Steyaert, M ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Elektrotech, Afd ESAT MICAS, B-3001 Louvain, Belgium

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 07期

关键词：

D O I：

10.1049/el:20010271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new ESD protection methodology for high-frequency CMOS LNAs is introduced. An on-chip inductor is employed to drain off the hazardous ESD charge while tuning out the harmful parasitic input capacitance. A 5.2GHz LNA has been designed. attaining high RF performance while providing a high level of ESD protection.

引用

页码：467 / 469

页数：3