Microstructuring of silicon with femtosecond laser pulses

被引：752

作者：

Her, TH ^{[1
]}

Finlay, RJ

Wu, C

Deliwala, S

Mazur, E

机构：

[1] Harvard Univ, Cambridge, MA 02138 USA

[2] No Telecom, Ottawa, ON K1Y 4H7, Canada

[3] Sci Res Lab Inc, Somerville, MA 02143 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that silicon surfaces develop an array of sharp conical spikes when irradiated with 500 laser pulses of 100-fs duration, 10-kJ/m(2) fluence in 500-Torr SF6 or Cl-2. The spikes are up to 40-mu m tall, and taper to about 1-mu m diam at the tip. Irradiation of silicon surfaces in N-2. Ne, or vacuum creates structured surfaces, but does not create sharp conical spikes. (C) 1998 American Institute of Physics.

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页码：1673 / 1675

页数：3

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