Characteristics of quantum well infrared photodetectors

被引：73

作者：

Ryzhii, V

机构：

[1] Comp. Solid State Physics Laboratory, University of Aizu

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.364426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is presented for the performance of quantum well infrared photodetectors (QWIPs) utilizing intersubband electron transitions and tunneling injection electrons, The dark current and the responsivity are derived as functions of the QWIP parameters, including the number of the QWs, in an analytical form, Nonlinear effects in the QWIP operation at high infrared power are considered and the threshold value of power density is estimated. (C) 1997 American Institute of Physics.

引用

收藏

页码：6442 / 6448

页数：7

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