Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

被引：36

作者：

Sato, KJ

Kotaka, I

Kondo, Y

Yamamoto, M

机构：

[1] NTT Opto-electronics Laboratories

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 18期

关键词：

D O I：

10.1063/1.117556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode-locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained. (C) 1996 American Institute of Physics.

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页码：2626 / 2628

页数：3

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