MONOLITHIC STRAINED-INGAASP MULTIPLE-QUANTUM-WELL LASERS WITH INTEGRATED ELECTROABSORPTION MODULATORS FOR ACTIVE-MODE LOCKING

被引：49

作者：

SATO, K ^{[1
]}

WAKITA, K ^{[1
]}

KOTAKA, I ^{[1
]}

KONDO, Y ^{[1
]}

YAMAMOTO, M ^{[1
]}

TAKADA, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, TRANSMISS SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.113059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.

引用

页码：1 / 3

页数：3

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