STRAINED-INGAASP MQW ELECTROABSORPTION MODULATOR INTEGRATED DFB LASER

被引：47

作者：

SATO, K

KOTAKA, I

WAKITA, K

KONDO, Y

YAMAMOTO, M

机构：

[1] NTT Opto-electronics Laboratories, Kanagawa Pref., 243-01, 3-1, Morinosato Wakamiya, Atsugi-shi

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 12期

关键词：

OPTICAL MODULATION; LASERS; INTEGRATED OPTOELECTRONICS; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19930726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The monolithic integration of a strained-InGaAsP MQW electroabsorption modulator and a DFB laser using only two-step MOVPE growth is described. The extinction ratio is 20 dB with a low-driving voltage of 1.4 V for an optical power density of 10(2) kW/cm2.

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收藏

页码：1087 / 1089

页数：3

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