Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs

被引：8

作者：

Anil, KG ^{[1
]}

Mahapatra, S ^{[1
]}

Eisele, I ^{[1
]}

机构：

[1] Univ Bundeswehr Munich, Inst Phys, D-85577 Neubiberg, Germany

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Impact ionization in n-channel MOSFETs for drain voltages (VD) below the bandgap voltages (qV(D) < E-G) is investigated. Novel experimental results are presented which suggest that the present understanding of the phenomenon is incomplete. Based on the measured data, inversion layer quantization is proposed as an additional energy gain mechanism for the electrons by shifting the electron energy distribution to higher energies.

引用

页码：675 / 678

页数：4

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