IMPACT IONIZATION AT VERY LOW VOLTAGES IN SILICON

被引：38

作者：

EITAN, B ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

SHAPPIR, J ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1244 / 1247

页数：4

共 16 条

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[9]

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