ELECTRON-TRANSPORT AND IONIZATION IN SILICON AT HIGH FIELDS

被引：6

作者：

LANYON, HPD

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1101(78)90150-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：291 / 295

页数：5

共 10 条

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OTTAVIANI, G ;

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[2]

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[3] ULTRASONIC AMPLIFICATION IN CDS [J].

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WHITE, DL ;

MCFEE, JH .

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[4]

KAREDA T, 1976, J APPL PHYS, V47, P4960

[5] INTERRELATIONSHIP BETWEEN SATURATED DRIFT VELOCITY AND IMPACT IONIZATION OF ELECTRONS IN SILICON [J].

LANYON, HPD .

APPLIED PHYSICS LETTERS, 1973, 22 (10) :522-524

[6] MAGNETORESISTANCE OF SILICON DIODES REVERSE BIASED INTO BREAKDOWN [J].

LANYON, HPD ;

NEAL, WS .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 21 (02) :605-616

[7] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[9]

WANG S, 1966, SOLID STATE ELECTRON, P225

[10]

YARIV A, 1967, QUANTUM ELECTRON, pCH17

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