MAGNETORESISTANCE OF SILICON DIODES REVERSE BIASED INTO BREAKDOWN

被引：4

作者：

LANYON, HPD

NEAL, WS

机构：

[1] WORCESTER POLYTECH INST, ELECT ENGN DEPT, WORCESTER, MA USA

[2] MIT, FRANCIS BITTER NATL MAGNET LAB, CAMBRIDGE, MA USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 02期

关键词：

D O I：

10.1002/pssa.2210210225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：605 / 616

页数：12

共 10 条

[1] DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON [J].

CANALI, C ;

OTTAVIANI, G ;

ALBERIGI.A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1707-+

[2] INTERRELATIONSHIP BETWEEN SATURATED DRIFT VELOCITY AND IMPACT IONIZATION OF ELECTRONS IN SILICON [J].

LANYON, HPD .

APPLIED PHYSICS LETTERS, 1973, 22 (10) :522-524

[3] MAGNETORESISTANCE OF AVALANCHING SEMICONDUCTOR DIODES [J].

LANYON, HPD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 21 (01) :197-207

[4]

LONG D, 1968, ENERGY BANDS SEMICON

[5] MAGNETO-RESISTANCE EFFECT AND THE BAND STRUCTURE OF SINGLE CRYSTAL SILICON [J].

PEARSON, GL ;

HERRING, C .

PHYSICA, 1954, 20 (11) :975-978

[6] MEASUREMENT OF DRIFT VELOCITY OF HOLES IN SILICON AT HIGH-FIELD STRENGTHS [J].

RODRIGUEZ, V ;

RUEGG, H ;

NICOLET, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) :44-+

[7]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[8]

SZE SM, 1966, APPL PHYS LETT, V8, P111, DOI DOI 10.1063/1.1754511

[9]

WANG S, 1966, SOLID STATE ELECTRON

[10] SILICON DIODE BREAKDOWN IN TRANSITION RANGE BETWEEN AVALANCHE EFFECT AND FIELD EMISSION [J].

WEINERTH, H .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1053-&

← 1 →