INTERRELATIONSHIP BETWEEN SATURATED DRIFT VELOCITY AND IMPACT IONIZATION OF ELECTRONS IN SILICON

被引：7

作者：

LANYON, HPD ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,ELECT ENGN DEPT,WORCESTER,MA 01609

来源：

关键词：

D O I：

10.1063/1.1654493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：522 / 524

页数：3

共 9 条

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

CANALI, C ;

OTTAVIANI, G ;

ALBERIGI.A .

[3]

CHYNOWETH AG, 1968, SEMICONDUCTORS SEMIM, V4

CROWELL, CR ;

SZE, SM .

[5]

LANYON HPD, UNPUBLISHED

[6]

Papoulis A., 1962, FOURIER INTEGRAL ITS

[7] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[9]

WANG S, 1966, SOLID STATE ELECTRON