MAGNETORESISTANCE OF AVALANCHING SEMICONDUCTOR DIODES

被引：2

作者：

LANYON, HPD ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,ELECT ENGN DEPT,WORCESTER,MA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 21卷 / 01期

关键词：

D O I：

10.1002/pssa.2210210121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：197 / 207

页数：11

共 21 条

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[8] INTERRELATIONSHIP BETWEEN SATURATED DRIFT VELOCITY AND IMPACT IONIZATION OF ELECTRONS IN SILICON [J].

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APPLIED PHYSICS LETTERS, 1973, 22 (10) :522-524

[9]

LANYON HPD, 1974, PHYS STATUS SOLIDI A, V21

[10] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

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