High-performance OTFTs using surface-modified alumina dielectrics

被引:366
作者
Kelley, TW [1 ]
Boardman, LD
Dunbar, TD
Muyres, DV
Pellerite, MJ
Smith, TYP
机构
[1] 3M Co, 3M Ctr, Elect & Inorgan Ctr, St Paul, MN 55144 USA
[2] 3M Co, 3M Ctr, Interface Mat & Organ Mat Technol Ctr, St Paul, MN 55144 USA
关键词
D O I
10.1021/jp034352e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We show novel and selective means to modify the dielectric surfaces in organic TFTs. Modification schemes include alkylphosphonic acid monolayers that have a strong affinity for alumina surfaces. Monolayers form robust, extremely uniform thin films and are deposited through simple spin-coating with a dilute solution of the monolayer precursor in solvent. Adding monolayers to organic TFTs has resulted in polycrystalline devices with mobilities nearly equal to single-crystal values while maintaining acceptable values of other device parameters (for example, the threshold voltage, on/off ratio, and subthreshold slope) required for fully functional integrated circuits.
引用
收藏
页码:5877 / 5881
页数:5
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