Determination of the visible range optical absorption spectrum of peroxy radicals in gamma-irradiated fused silica

被引:101
作者
Griscom, DL
Mizuguchi, M
机构
[1] USN, Res Lab, Div Opt Sci, Washington, DC 20375 USA
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 226, Japan
关键词
D O I
10.1016/S0022-3093(98)00721-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two silicas (Russian KS-4V and an F-doped silica) with <1 ppm cationic impurities, OH contents <5 ppm, and Cl contents <20 ppm have been investigated in optical-fiber forms by differential-optical spectroscopy following 14-MGy(Si) Co-60 gamma irradiation at 27 degrees C and isochronal anneals to 600 degrees C. Bulk samples of the F-doped silica and of two other high-purity silicas (Suprasil F300 and F310) were studied by electron spin resonance (ESR) and isochronal annealing following exposure to (if a gamma-ray dose of 12 MGy(Si) and (ii) the same 12 MGy gamma irradiation plus a subsequent fission-reactor irradiation. The strength of an optical band near 2 eV is shown to correlate with the intensity of the ESR spectrum of peroxy radicals (PORs) as a function of anneal temperature. The peak energy, band width, and oscillator strength of this band are determined to be E-o=1.97 +/- 0.01 eV, W = 0.17 +/- 0.01 eV, and f(POR) = 0.00057 +/- 0.00015, respectively. This POR band overlaps with, and has previously defied separation from, those of the non-bridging-oxygen hole centers (NBOHCs), here fitted by two bands (E-o = 2.19 +/- 0.01 eV, W = 0.51 +/- 0.01 eV and E-o = 2.08 +/- 0.01 eV, W = 0.32 +/- 0.01 eV) with an aggregate oscillator strength f(NBOHC) = 0.00054 +/- 0.00015. The annealing processes of the PORs and NBOHCs displayed a dose-rate dependence, tentatively linked to the effect of dose rate (1 Gy/s vis-a-vis 5.3 Gy/s) on the steady-state self-trapped-hole populations, which in turn determine the equilibrium of radiolytic interstitial oxygen species: O-0 + O-0 reversible arrow O-2. (C) 1998 Elsevier Science B.V. All rights reserved.
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页码:66 / 77
页数:12
相关论文
共 25 条
[1]  
[Anonymous], 1990, Glass Science and Technology, DOI DOI 10.1016/B978-0-12-706707-0.50010-4
[2]   CORRELATED DEFECT CREATION AND DOSE-DEPENDENT RADIATION SENSITIVITY IN AMORPHOUS SIO2 [J].
DEVINE, RAB ;
ARNDT, J .
PHYSICAL REVIEW B, 1989, 39 (08) :5132-5138
[3]   THEORY OF THE PEROXY-RADICAL DEFECT IN A-SIO2 [J].
EDWARDS, AH ;
FOWLER, WB .
PHYSICAL REVIEW B, 1982, 26 (12) :6649-6660
[4]  
FOWLER WB, 1968, PHYSICS COLOR CTR, P72
[5]   FUNDAMENTAL DEFECT CENTERS IN GLASS - PEROXY RADICAL IN IRRADIATED, HIGH-PURITY, FUSED-SILICA [J].
FRIEBELE, EJ ;
GRISCOM, DL ;
STAPELBROEK, M ;
WEEKS, RA .
PHYSICAL REVIEW LETTERS, 1979, 42 (20) :1346-1349
[6]   THE OPTICAL-ABSORPTION AND LUMINESCENCE BANDS NEAR 2 EV IN IRRADIATED AND DRAWN SYNTHETIC SILICA [J].
FRIEBELE, EJ ;
GRISCOM, DL ;
MARRONE, MJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) :133-144
[7]  
Griscom D. L., 1986, Structure and Bonding in Noncrystalline Solids, P369
[9]   FUNDAMENTAL RADIATION-INDUCED DEFECT CENTERS IN SYNTHETIC FUSED SILICAS - ATOMIC CHLORINE, DELOCALIZED E' CENTERS, AND A TRIPLET-STATE [J].
GRISCOM, DL ;
FRIEBELE, EJ .
PHYSICAL REVIEW B, 1986, 34 (11) :7524-7533
[10]   ELECTRON-SPIN-RESONANCE CHARACTERIZATION OF SELF-TRAPPED HOLES IN AMORPHOUS-SILICON DIOXIDE [J].
GRISCOM, DL .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 149 (1-2) :137-160