CORRELATED DEFECT CREATION AND DOSE-DEPENDENT RADIATION SENSITIVITY IN AMORPHOUS SIO2

被引：111

作者：

DEVINE, RAB ^{[1
]}

ARNDT, J ^{[1
]}

机构：

[1] UNIV TUBINGEN,INST MINERAL,D-7400 TUBINGEN 1,FED REP GER

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5132 / 5138

页数：7

相关论文

共 35 条

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[8] ISOTHERMAL ANNEALING OF E'1 DEFECTS IN ION-IMPLANTED SIO2
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 378 - 382
[9] RADIATION-SENSITIVITY ENHANCEMENT AND ANNEALING VARIATION IN DENSIFIED, AMORPHOUS SIO2
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[J]. PHYSICAL REVIEW B, 1987, 35 (18): : 9783 - 9789
[10] DEVINE RAB, UNPUB

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