Electron drift velocity in AlGaN/GaN channel at high electric fields

被引：106

作者：

Ardaravicius, L

Matulionis, A

Liberis, J

Kiprijanovic, O

Ramonas, M

Eastman, LF

Shealy, JR

Vertiatchikh, A

机构：

[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[2] Cornell Univ, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 19期

关键词：

D O I：

10.1063/1.1626258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. No velocity saturation is reached at fields up to 130 kV/cm, when the effect of Joule heating is minimized through application of nanosecond pulses of voltage. The estimated drift velocity is near 2x10(7) cm/s at 130 kV/cm. Monte Carlo simulation of the drift velocity is carried out with and without effects of channel self-heating for a many-subband model, with hot phonons and electron gas degeneracy taken into account. (C) 2003 American Institute of Physics.

引用

页码：4038 / 4040

页数：3

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