Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs

被引：86

作者：

Esseni, D ^{[1
]}

Mastrapasqua, M ^{[1
]}

Celler, GK ^{[1
]}

Baumann, FH ^{[1
]}

Fiegna, C ^{[1
]}

Selmi, L ^{[1
]}

Sangiorgi, E ^{[1
]}

机构：

[1] Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron and hole effective mobilities of ultra-thin SOI Nand P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ni-inv) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness (T-SI). However, at small Ni-inv the mobility is clearly reduced for decreasing T-SI. The effective mobility data are used to study the implications for ultra-short MOS transistor performance at device simulation level.

引用

页码：671 / 674

页数：4

共 14 条

[1] On the performance limits for Si MOSFET's: A theoretical study [J].