Magneto-optical transitions in the presence of a two-dimensional hole gas

被引：6

作者：

Gravier, L

Potemski, M

Fisher, A

Ploog, K

机构：

[1] CNRS,F-38042 GRENOBLE,FRANCE

[2] PAUL DRUDE INST FESTKORPERELEKTR,D-10017 BERLIN,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期

关键词：

D O I：

10.1016/0038-1101(95)00345-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magneto-luminescence and luminescence excitation spectra of a p-type modulation doped GaAs/GaAlAs quantum well are reported. The magnetic field evolution of the pseudo-absorption transitions can be qualitatively understood in terms of the valence band Landau level structure and the expected changes in the position of the Fermi energy. Light hole transitions show excitonic character for heavy hole concentrations at least up to 3 x 10(11) cm(-2). Additional absorption transitions, not active in undoped structures, are observed in the vicinity of the Fermi energy.

引用

页码：697 / 699

页数：3

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