Investigation of the oxygen gas sensing performance of Ga2O3 thin films with different dopants

被引：152

作者：

Li, YX

Trinchi, A

Wlodarski, W

Galatsis, K

Kalantar-zadeh, K

机构：

[1] Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 93卷 / 1-3期

关键词：

gas sensing; gallium oxide; zinc oxide; cerium oxide; sol-gel process;

D O I：

10.1016/S0925-4005(03)00171-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The oxygen gas sensing performance of Ga2O3 semiconducting thin films doped with Ce, Sb, W and Zn have been investigated. These thin films have been prepared by the sol-gel process and were deposited on sapphire transducers with inter-digital electrodes and a platinum heater integrated. The sensors were exposed to various concentrations of oxygen gas in an ambient of nitrogen and the gas sensing performance has been examined. The responses of sensors doped with Ce, Sb, W and Zn were stable and reproducible at their respective operating temperatures. It was observed that Ga2O3 films doped with Ce, Zn and W are promising for oxygen gas sensing applications. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：431 / 434

页数：4

共 12 条

[1]

[Anonymous], 1983, NONSTOICHIOMETRY DIF

[2] Investigation on the O3 sensitivity properties of WO3 thin films prepared by sol-gel, thermal evaporation and r.f. sputtering techniques [J].