An improved 2.5 GHz electron pump: Single-electron transport through shallow-etched point contacts driven by surface acoustic waves

被引：15

作者：

Utko, P ^{[1
]}

Gloos, K ^{[1
]}

Hansen, JB ^{[1
]}

Lindelof, PE ^{[1
]}

机构：

[1] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, fAFG, DK-2100 Copenhagen, Denmark

来源：

ACTA PHYSICA POLONICA A | 2003年 / 103卷 / 06期

关键词：

D O I：

10.12693/APhysPolA.103.533

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating surface acoustic waves beam, up to n = 20 Current plateaus at I = nef could be resolved, where n is an integer, e the electron charge, and f the surface acoustic waves frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to be DeltaI/I = +/-25 ppm over 0.25 mV in gate voltage, which is better than previous results.

引用

页码：533 / 538

页数：6

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