Phthalocyanine-based field-effect transistor as ozone sensor

被引:84
作者
Bouvet, M
Guillaud, G
Leroy, A
Maillard, A
Spirkovitch, S
Tournilhac, FG
机构
[1] UCB, Elect Lab, F-69622 Villeurbanne, France
[2] ESIEE, Microelect Lab, F-93162 Noisy Le Grand, France
关键词
gas sensor; ozone; phthalocyanine; field-effect transistor (FET);
D O I
10.1016/S0925-4005(00)00682-1
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this paper, we present a new sensor, which exhibits a sensitivity to ozone to less than 10 ppb. The device is a phthalocyanine-based field-effect transistor which is capable of working at room temperature. We describe a dynamic procedure, working out of the equilibrium state, to get rid of drift phenomena. A process where 2 min exposure alternates with 8 min static rest period leads, after a conditioning period, to a stable and reproducible signal. The response of the device (55 pA ppb(-1) min(-1)) is linearly correlated to the ozone concentration in air, in the range 0-150 ppb. The use of a dynamic rest (flow of ozone free air) instead of a static rest reduces the duration of the recovery period, but is not necessary to achieve a good reproducibility. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:63 / 70
页数:8
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