Probing epitaxial growth of graphene on silicon carbide by metal decoration

被引：61

作者：

Poon, Siew Wai ^{[1
]}

Chen, Wei ^{[1
]}

Tok, Eng Soon ^{[1
]}

Wee, Andrew T. S. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.2883941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using Co-decoration technique coupled with in situ scanning tunneling microscope (STM), the evolution of epitaxial graphene was found to preferentially begin at step edges of the silicon carbide surface and occurs with loss of Si and breakdown of C-rich (6 root 3 x 6 root 3)R30 degrees template, which provides the C source for graphene growth. Interestingly, a new C-rich phase is also formed at the interface and it acts as a buffer layer for graphene from underlying bulk. STM reveals that graphene lies 2.3 +/- 0.3 angstrom above the buffer layer, larger than sp(3) C-C bond length (1.54 angstrom) but shorter than graphite interlayer separation (3.37 angstrom), suggesting a pseudo-van der Waals interfacial interaction. (C) 2008 American Institute of Physics.

引用

页数：3

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