Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys

被引：12

作者：

Eguchi, S ^{[1
]}

Chleirigh, CN

Olubuyide, OO

Hoyt, JL

机构：

[1] Renesas Technol Corp, Wafer Mfg Technol Unit, Takasaki, Gumma 3700021, Japan

[2] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 03期

关键词：

D O I：

10.1063/1.1641169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The germanium-concentration dependence of arsenic diffusion in relaxed silicon germanium (Si1-xGex) alloys with Ge content ranging from 0 to 40% has been investigated. Arsenic was implanted into relaxed epitaxial layers at 15 keV to a dose of 3x10(15) cm(-2), and diffusion during furnace and rapid thermal annealing was studied. Under equilibrium extrinsic conditions, the arsenic diffusivity increases exponentially with increasing Ge content in Si1-xGex. Under transient diffusion conditions, the arsenic diffusivity in Si1-xGex is retarded compared to the diffusivity for longer times, while a slight transient enhancement of As diffusion is observed in Si. The degree of transient retardation depends on the germanium concentration in the alloy. (C) 2004 American Institute of Physics.

引用

页码：368 / 370

页数：3

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