Epitaxial growth of magnetoresistive (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on (001)Si substrates

被引：23

作者：

Fontcuberta, J ^{[1
]}

Bibes, M

Martínez, B

Trtik, V

Ferrater, C

Sánchez, F

Varela, M

机构：

[1] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Catalunya, Spain

[2] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Catalunya, Spain

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 12期

关键词：

D O I：

10.1063/1.123674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that suitable choice of the buffer heterostructure allows us to obtain epitaxial (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. The magnetotransport properties are investigated. Irrespective of the film texture, it is found that the easy-magnetization direction lies within the film plane. The low-field magnetoresistance is mainly controlled by the in-plane misorientation of crystallites while differences associated with the distinct microstructure of the interfaces appear to have only a second-order effect. (C) 1999 American Institute of Physics. [S0003-6951(99)03512-3].

引用

页码：1743 / 1745

页数：3

共 14 条

[1] High-field magnetoresistance at interfaces in manganese perovskites [J].

Balcells, L ;

Fontcuberta, J ;

Martínez, B ;

Obradors, X .

PHYSICAL REVIEW B, 1998, 58 (22) :14697-14700

[2]

FONTCUBERT AJ, UNPUB

[3] Bandwidth control of the spin diffusion through interfaces and the electron-phonon coupling in magnetoresistive manganites [J].

Fontcuberta, J ;

Martinez, B ;

Laukhin, V ;

Balcells, L ;

Obradors, X ;

Cohenca, CH ;

Jardim, RF .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1998, 356 (1742) :1577-1590

[4] Growth and properties of c-axis textured La0.7Sr0.3MnO3-delta films on SiO2/Si substrates with a Bi4Ti3O12 template layer [J].

Gu, JY ;

Kwon, C ;

Robson, MC ;

Trajanovic, Z ;

Ghosh, K ;

Sharma, RP ;

Shreekala, R ;

Rajeswari, M ;

Venkatesan, T ;

Ramesh, R ;

Noh, TW .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1763-1765

[5] In-plane grain boundary effects on the magnetotransport properties of La0.7Sr0.3MnO3-δ [J].

Gu, JY ;

Ogale, SB ;

Rajeswari, M ;

Venkatesan, T ;

Ramesh, R ;

Radmilovic, V ;

Dahmen, U ;

Thomas, G ;

Noh, TW .

APPLIED PHYSICS LETTERS, 1998, 72 (09) :1113-1115

[6] Spin-polarized intergrain tunneling in La-2/Sr-3(1)/3MnO3 [J].

Hwang, HY ;

Cheong, SW ;

Ong, NP ;

Batlogg, B .

PHYSICAL REVIEW LETTERS, 1996, 77 (10) :2041-2044

[7] Magnetoresistance of artificial La0.7Sr0.3MnO3 grain boundaries as a function of misorientation angle [J].

Isaac, SP ;

Mathur, ND ;

Evetts, JE ;

Blamire, MG .

APPLIED PHYSICS LETTERS, 1998, 72 (16) :2038-2040

[8] Stress-induced effects in epitaxial (La0.7Sr0.3)MnO3 films [J].

Kwon, C ;

Robson, MC ;

Kim, KC ;

Gu, JY ;

Lofland, SE ;

Bhagat, SM ;

Trajanovic, Z ;

Rajeswari, M ;

Venkatesan, T ;

Kratz, AR ;

Gomez, RD ;

Ramesh, R .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1997, 172 (03) :229-236

[9] Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundaries [J].

Mathur, ND ;

Burnell, G ;

Isaac, SP ;

Jackson, TJ ;

Teo, BS ;

MacManusDriscoll, JL ;

Cohen, LF ;

Evetts, JE ;

Blamire, MG .

NATURE, 1997, 387 (6630) :266-268

[10] Epitaxial growth of SrTiO3 (00h), (0hh), and (hhh) thin films on buffered Si(001) [J].

F. Sáanchez ;

R. Aguiar ;

V. Trtik ;

C. Guerrero ;

C. Ferrater ;

M. Varela .

Journal of Materials Research, 1998, 13 (6) :1422-1425

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