Effects of magnetic field on the manganite-based bilayer junction

被引：109

作者：

Sun, JR

Xiong, CM

Zhao, TY

Zhang, SY

Chen, YF

Shen, BG

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.1664032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An oxide bilayer junction has been fabricated by growing a La0.32Pr0.35Ca0.33MnO3 film on 0.5 wt % Nb-doped SrTiO3 crystal, and its behavior under magnetic field is experimentally studied. It is found that external field greatly affected the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance. The most striking observation of the present work is that the magnetoresistance of the junction can be either positive or negative, depending on temperature and applied current, and is asymmetric with respect to the direction of the bias current. These results reveal the great potential of the manganites in configuring artificial devices. (C) 2004 American Institute of Physics.

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页码：1528 / 1530

页数：3

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