Monte Carlo simulation of high field transport and impact ionization in GaAs p(+)in(+) diodes

被引：15

作者：

Dunn, GM ^{[1
]}

Rees, GJ ^{[1
]}

David, JPR ^{[1
]}

Plimmer, SA ^{[1
]}

Herbert, DC ^{[1
]}

机构：

[1] DEF RES AGCY,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 12期

关键词：

D O I：

10.1109/16.544426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two Monte Carlo models, one using realistic band structure, the other an analytical approximation, have been applied to the study of impact ionization in bulk GaAs and short p(+) in(+) diodes. The results were compared with experiment. It was found that the faster, simpler analytical model provided an excellent description of the particle dynamics agreeing extremely well both with experiment and the more sophisticated model.

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收藏

页码：2303 / 2305

页数：3

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