BREAKDOWN VOLTAGE IN ULTRA-THIN PIN DIODES

被引：27

作者：

HERBERT, DC

机构：

[1] DRA Electron. Div., Malvern

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 11期

关键词：

D O I：

10.1088/0268-1242/8/11/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The semianalytic trajectory method for hot carrier transport is combined with a new model for impact ionization to study breakdown in ultra-thin pin diodes where the dead space and spatial transient can dominate the ionization physics. Good agreement with the published data of Gaul et al is achieved.

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收藏

页码：1993 / 1998

页数：6

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