BAND-STRUCTURE ENGINEERING OF HOT-CARRIER TRANSPORT IN SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：12

作者：

HERBERT, DC

机构：

[1] DRA Electron. Div., RSRE, Malvern

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 01期

关键词：

D O I：

10.1088/0268-1242/7/1/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Base transit time can be a limiting factor for the cut-off frequency in SiGe base heterojunction bipolar transistors. It is argued that this time can be reduced by exploiting hot-carrier transport within the active base region. A band structure engineering approach is proposed for launching and maintaining hot-carrier flows.

引用

收藏

页码：44 / 50

页数：7

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