A MODEL FOR TRANSIENT IMPACT IONIZATION

被引：7

作者：

HERBERT, DC ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,DIV DRA ELECTR,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1992年 / 11卷 / 04期

关键词：

D O I：

10.1108/eb010102

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A model for impact ionisation allowing for the spatial transient is described. Ionisation rates and phonon scattering rates are adjusted to fit experimental data. To reduce some of the uncertainty, the calculated ionisation rates due to Kane[1] are used.

引用

页码：413 / 418

页数：6

共 9 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].

ANDERSON, CL ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[2] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].

BULMAN, GE ;

ROBBINS, VM ;

BRENNAN, KF ;

HESS, K ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :181-185

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[4] BAND-STRUCTURE ENGINEERING OF HOT-CARRIER TRANSPORT IN SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HERBERT, DC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) :44-50

[5]

HERBERT DC, 1989, P NASECODE, V6, P220

[6] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J].

KANE, EO .

PHYSICAL REVIEW, 1967, 159 (03) :624-&

[7] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[8] SOFT-THRESHOLD LUCKY DRIFT THEORY OF IMPACT IONIZATION IN SEMICONDUCTORS [J].

RIDLEY, BK .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (02) :116-122

[9] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J].

VANOVERSTRAETEN, R ;

DEMAN, H .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :583-+

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